General Information
Scope
- Nanometer-scale transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanism
- Junction and insulator materials and process technology for nanoelectronic devices
- Techniques for fabrication of nanostructures, including nanometer scale patterning
- Physics of nanoelectronic devices, e.g., quantum effects, non-equilibrium transport
- Modeling and simulation of nanoelectronic devices, e.g., including atomistic effects
- Nanoscale surface, interface, and heterojunction effects in devices
- Device scaling issues including doping fluctuations and atomic granularity
- Circuit design issues and novel circuit architectures
- Optoelectronics using silicon nanostructures
- Techniques targeting zero power electronics (self-supplying), including wireless sensors, energy harvesting, steep slope devices, ultra-low power design and devices
- Devices for 3D and heterogeneous integration on Silicon, including Graphene, III-V devices, CNT, spin-based devices, MEMS and NEMS, etc.
- Novel transistors based on two dimensional materials, e.g., MoS2, WS2, etc.
- Novel non-volatile memories, e.g., MRAM, RRAM, PCM, FeRAM etc.
- Neuromorphic devices and architectures for AI
- Integrated energy harvesting and energy storage based on new material and structures
- Reliability and Characterization of nanoelectronic devices
- Environmental devices which contribute to low-carbon society (wireless sensors, energy harvesters, steep slope devices, etc.)
- Power devices (SiC, GaN etc.)
- Silicon and Non-silicon quantum devices and low temperature electronics
Venue
Hilton Hawaiian Village, Honolulu, HI USA
Meeting Rooms
Located in the 2nd floor of Mid-Pacific Conf. Center, behind the ABC store Entering Hilton on the right, next to Kalia Tower
